MJD122 ON Semiconductor, MJD122 Datasheet - Page 2

• Manufacturer Part Number: MJD122
• Description: Darlington Transistors 8A 100V Bipolar
• Manufacturer: ON Semiconductor

Specifications of MJD122

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 10 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 100, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage (Note 2)
Base−Emitter On Voltage
Current−Gain−Bandwidth Product
Output Capacitance
Small−Signal Current Gain
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
C
C
C
C
C
C
CE
CB
BE
CB
= 30 mAdc, I
= 4 Adc, V
= 8 Adc, V
= 4 Adc, I
= 8 Adc, I
= 8 Adc, I
= 4 Adc, V
= 3 Adc, V
= 3 Adc, V
= 5 Vdc, I
= 50 Vdc, I
= 100 Vdc, I
= 10 Vdc, I
B
B
B
CE
CE
CE
CE
CE
= 16 mAdc)
= 80 mAdc)
= 80 mAdc)
C
B
B
E
= 0)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc, f = 1 MHz)
= 4 Vdc, f = 1 kHz)
E
= 0)
= 0)
= 0, f = 0.1 MHz)
= 0)
2.5
1.5
0.5
Characteristic
T
A
2
1
0
25
20
15
10
T
5
0
(T
C
25
C
= 25_C unless otherwise noted)
50
SURFACE
Figure 1. Power Derating
MOUNT
http://onsemi.com
T
T
C
A
T, TEMPERATURE (°C)
75
2
100
MJD127
MJD122
125
V
Symbol
V
V
V
CEO(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
|h
h
C
CEO
CBO
EBO
h
FE
fe
ob
fe
|
150
1000
Min
100
100
300
−
−
−
−
−
−
−
4
−
−
12,000
Max
300
200
4.5
2.8
10
10
−
2
−
2
4
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
−