BD651 Bourns Inc., BD651 Datasheet - Page 3
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BD651
Manufacturer Part Number
BD651
Description
Darlington Transistors 62.5W NPN Silicon
Manufacturer
Bourns Inc.
Datasheet
1.BD649.pdf
(4 pages)
Specifications of BD651
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
140 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
750
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BD651
Manufacturer:
MOSPEC
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Company:
Part Number:
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Part Number:
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Manufacturer:
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Quantity:
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Company:
Part Number:
BD6516F-E2
Manufacturer:
ROHM
Quantity:
2 500
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
50000
10000
R O D U C T
1000
100
0·5
V
t
p
CE
=
= 300 µs, duty cycle < 2%
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
3 V
1·0
I
C
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
3·0
2·5
2·0
1·5
1·0
0·5
0·5
BASE-EMITTER SATURATION VOLTAGE
T
T
T
I
t
C
C
C
B
TYPICAL CHARACTERISTICS
p
= -40°C
= 25°C
= 100°C
= I
= 300 µs, duty cycle < 2%
T
T
T
C
C
C
C
= -40°C
= 25°C
= 100°C
/ 100
TCS130AD
COLLECTOR CURRENT
1·0
I
C
- Collector Current - A
10
Figure 3.
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
2·0
1·5
1·0
0·5
0·5
t
I
NPN SILICON POWER DARLINGTONS
B
p
= I
= 300 µs, duty cycle < 2%
C
/ 100
TCS130AC
COLLECTOR CURRENT
1·0
I
BD645, BD647, BD649, BD651
C
- Collector Current - A
10
Figure 2.
vs
T
T
T
C
C
C
= -40°C
= 25°C
= 100°C
TCS130AB
10
3