MJ11015 ON Semiconductor, MJ11015 Datasheet

Darlington Transistors 30A 120V Bipolar

MJ11015

Manufacturer Part Number
MJ11015
Description
Darlington Transistors 30A 120V Bipolar
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJ11015

Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-204-2 (TO-3)
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
120 V
Maximum Dc Collector Current
30 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
30 A
Dc Collector/base Gain Hfe Min
200, 1000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11015
Manufacturer:
ON
Quantity:
165
Part Number:
MJ11015
Manufacturer:
ST
0
Part Number:
MJ11015
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJ11015
Quantity:
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MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
High-Current
Complementary Silicon
Transistors
amplifier applications.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C @ T
Operating Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Sol-
dering Purposes for ≤ 10 Seconds
. . . for use as output devices in complementary general purpose
Resistor
High DC Current Gain −
Monolithic Construction with Built−in Base Emitter Shunt
Junction Temperature to + 200_C
h
Characteristic
FE
Rating
= 1000 (Min) @ I
MJ11016 is a Preferred Device
C
= 100°C
MJ11012
MJ11015/6
MJ11012
MJ11015/6
C
= 25°C
C
− 20 Adc
Symbol
Symbol
T
V
R
J
V
V
P
CEO
, T
T
I
I
qJC
CB
EB
C
B
D
L
stg
−55 to + 200
Value
1.15
Max
0.87
120
120
200
275
60
60
30
5
1
1
°C/W
W/°C
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
°C
W
Preferred devices are recommended choices for future use
and best overall value.
MJ11012
MJ11012G
MJ11015
MJ11015G
MJ11016
MJ11016G
BASE
COMPLEMENTARY SILICON
60 − 120 VOLTS, 200 WATTS
MJ1101x = Device Code
G
A
YY
WW
MEX
Device
30 AMPERE DARLINGTON
1
TO−204AA (TO−3)
POWER TRANSISTORS
CASE 1−07
ORDERING INFORMATION
COLLECTOR
CASE
STYLE 1
EMITTER 2
MJ11016
MJ11012
2
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
NPN
http://onsemi.com
1
x = 2, 5 or 6
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−3
TO−3
TO−3
TO−3
TO−3
TO−3
Publication Order Number:
BASE
1
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
COLLECTOR
CASE
MARKING
DIAGRAM
EMITTER 2
Shipping
MJ1101xG
MJ11015
AYYWW
PNP
MJ11012/D
MEX

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MJ11015 Summary of contents

Page 1

... MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − 1000 (Min − 20 Adc FE C • Monolithic Construction with Built−in Base Emitter Shunt Resistor • ...

Page 2

... EMITTER Figure 1. Darlington Circuit Schematic (T = 25_C unless otherwise noted.) C MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 = 150_C) MJ11012 = 150_C) MJ11015, MJ11016 C http://onsemi.com 2 COLLECTOR ≈ 8.0 k ≈ 40 EMITTER Î Î Î Î Î Î Î Î Î Î Î Î Symbol Min Max Î ...

Page 3

... C CE http://onsemi.com 3 PNP MJ11015 NPN MJ11012, MJ11016 = 3 Vdc 100 200 300 500 f, FREQUENCY (kHz) Figure 3. Small−Signal Current Gain BONDING WIRE LIMITATION THERMAL LIMITATION @ T = 25°C C SECOND BREAKDOWN LIMITATION MJ11012 MJ11015, MJ11016 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE 700 1.0 k 200 ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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