GSIB4A60-E3/45 Vishay, GSIB4A60-E3/45 Datasheet - Page 3

• Manufacturer Part Number: GSIB4A60-E3/45
• Description: Bridge Rectifiers 4.0 Amp 600 Volt
• Manufacturer: Vishay

Specifications of GSIB4A60-E3/45

• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Forward Continuous Current: 4 A
• Max Surge Current: 80 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 25.3 mm
• Width: 4.8 mm
• Height: 15.3 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Package / Case: GSIB-3G
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88858
Revision: 01-Feb-08
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.3
20
Percent of Rated Peak Reverse Voltage (%)
T
Instantaneous Forward Voltage (V)
J
0.5
= 150 °C
T
J
40
= 150 °C
0.7
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T
J
For technical questions within your region, please contact one of the following:
60
= 125 °C
0.602 (15.3)
0.579 (14.7)
0.709 (18.0)
0.669 (17.0)
0.9
0.118 x 45° Chamfer
T
J
0.041 (1.05)
0.057 (1.45)
= 125 °C
T
0.157 (4.0)
T
J
80
J
= 25 °C
= 25 °C
1.1
+
100
1.3
0.996 (25.3)
0.972 (24.7)
0.303 (7.7)
0.287 (7.3)
Case Style GSIB-3G
(12.5)
0.492
(3 x)
0.062 (1.58)
(1.50)
0.078 (1.98)
0.059
0.130 (3.3)
0.146 (3.7)
0.134 (3.4)
0.122 (3.1)
DIA.
Figure 6. Typical Transient Thermal Impedance Per Diode
0.042 (1.07)
0.038 (0.96)
0.382 (9.7)
0.366 (9.3)
0.709 (18.0)
0.669 (17.0)
1000
100
100
0.1
DIA.
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0
GSIB4A20 thru GSIB4A80
Vishay General Semiconductor
0.150 (3.8)
0.134 (3.4)
(0.30)
0.012
0.1
Z
0.189 (4.8)
0.173 (4.4)
0.126 (3.2)
0.110 (2.8)
Reverse Voltage (V)
t - Heating Time (s)
Enlarged
1
Detail Z
1
10
10
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100
100
3