BZB84-B6V8,215 NXP Semiconductors, BZB84-B6V8,215 Datasheet - Page 9
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BZB84-B6V8,215
Manufacturer Part Number
BZB84-B6V8,215
Description
DIODE ZENER DL 6.8V 300MW SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BZB84-C10215.pdf
(14 pages)
Specifications of BZB84-B6V8,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Voltage - Zener (nom) (vz)
6.8V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
2µA @ 4V
Configuration
1 Pair Common Anode
Power - Max
300mW
Impedance (max) (zzt)
15 Ohm
Tolerance
±2%
Mounting Type
Surface Mount
Zener Voltage
6.8 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
2.85 mV / K
Power Dissipation
300 mW
Maximum Reverse Leakage Current
2 uA
Maximum Zener Impedance
15 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061713215
NXP Semiconductors
BZB84_SER_3
Product data sheet
Fig 3.
Fig 5.
(mV/K)
(mA)
S
I
Z
Z
50
40
30
20
10
0
1
2
3
0
0
0
T
BZB84-B/C2V4 to BZB84-B/C4V3
Per diode: Temperature coefficient as a
function of working current; typical values
T
BZB84-B/C2V7 to BZB84-B/C8V2
Per diode: Working current as a function of
working voltage; typical values
j
j
= 25 C to 150 C
= 25 C
V
Z(nom)
2
(V) = 2.7
20
3.3
4
3.9
4.7
5.6
6
4V3
40
6.8
3V9
2V4
2V7
3V3
I
3V6
Z
8
(mA)
006aaa996
V
8.2
mbg783
Z
3V0
(V)
60
10
Rev. 03 — 9 June 2009
Fig 4.
Fig 6.
(mV/K)
S
(mA)
I
Z
Z
30
25
20
15
10
10
5
0
5
5
0
0
T
BZB84-B/C4V7 to BZB84-B/C12
Per diode: Temperature coefficient as a
function of working current; typical values
0
T
BZB84-B/C10 to BZB84-B/C36
Per diode: Working current as a function of
working voltage; typical values
V
j
j
Z(nom)
= 25 C to 150 C
= 25 C
(V) = 10
4
10
12
15
8
18
9V1
8V2
7V5
6V8
12
11
10
20
BZB84 series
22
12
6V2
5V6
5V1
4V7
27
30
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
16
006aaa997
V
I
Z
Z
33
mbg782
(mA)
(V)
36
40
20
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