BZB84-B12,215 NXP Semiconductors, BZB84-B12,215 Datasheet - Page 9

• Manufacturer Part Number: BZB84-B12,215
• Description: DIODE ZENER DL 12V 300MW SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BZB84-B12,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Voltage - Zener (nom) (vz): 12V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Configuration: 1 Pair Common Anode
• Power - Max: 300mW
• Impedance (max) (zzt): 25 Ohm
• Tolerance: ±2%
• Mounting Type: Surface Mount
• Zener Voltage: 12 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 8 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 25 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061719215

NXP Semiconductors
BZB84_SER_3
Product data sheet
Fig 3.
Fig 5.
(mV/K)
(mA)
S
I
Z
Z
50
40
30
20
10
0
1
2
3
0
0
0
T
BZB84-B/C2V4 to BZB84-B/C4V3
Per diode: Temperature coefficient as a
function of working current; typical values
T
BZB84-B/C2V7 to BZB84-B/C8V2
Per diode: Working current as a function of
working voltage; typical values
j
j
= 25 C to 150 C
= 25 C
V
Z(nom)
2
(V) = 2.7
20
3.3
4
3.9
4.7
5.6
6
4V3
40
6.8
3V9
2V4
2V7
3V3
I
3V6
Z
8
(mA)
006aaa996
V
8.2
mbg783
Z
3V0
(V)
60
10
Rev. 03 — 9 June 2009
Fig 4.
Fig 6.
(mV/K)
S
(mA)
I
Z
Z
30
25
20
15
10
10
5
0
5
5
0
0
T
BZB84-B/C4V7 to BZB84-B/C12
Per diode: Temperature coefficient as a
function of working current; typical values
0
T
BZB84-B/C10 to BZB84-B/C36
Per diode: Working current as a function of
working voltage; typical values
V
j
j
Z(nom)
= 25 C to 150 C
= 25 C
(V) = 10
4
10
12
15
8
18
9V1
8V2
7V5
6V8
12
11
10
20
BZB84 series
22
12
6V2
5V6
5V1
4V7
27
30
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
16
006aaa997
V
I
Z
Z
33
mbg782
(mA)
(V)
36
40
20
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