25MT060WFAPBF Vishay, 25MT060WFAPBF Datasheet - Page 4

• Manufacturer Part Number: 25MT060WFAPBF
• Description: Bridge Rectifiers 600 Volt 50 Amp Full Bridge
• Manufacturer: Vishay

Specifications of 25MT060WFAPBF

• Package / Case: MTP
• Maximum Operating Temperature: + 150 C
• Length: 44.5 mm
• Width: 33 mm
• Height: 16 mm
• Mounting Style: Screw
• Minimum Operating Temperature: - 40 C
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 50A
• Leaded Process Compatible: Yes
• Collector Emitter Saturation Voltage Vce(sat): 3.25V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

25MT060WFAPbF
Vishay High Power Products
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage
7000
6000
5000
4000
3000
2000
1000
16.0
12.0
8.0
4.0
0.0
0
1
0
I C = 25A
V CE = 480V
Coes
Q G, Total Gate Charge (nC)
Cres
Cies
50
10
0.001
V GE = 0V, f = 1 MHZ
C
C res = C gc
C
0.01
V CE (V)
ies
oes
0.1
10
1
1E-006
100
= C
= C
Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
D = 0.50
ce
ge
0.05
0.05
+ C
0.10
0.10
0.02
0.02
0.01
0.01
0.20
+C
100
gc
gc
, C
For technical questions, contact:
SINGLE PULSE
( THERMAL RESPONSE )
150
ce
1E-005
SHORTED
1000
200
(Warp Speed IGBT), 50 A
"Full Bridge" IGBT MTP
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
[e-mail]
Fig. 8 - Typical Switching Losses vs. Junction Temperature
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 7 - Typical Switching Losses vs. Gate Resistance
0.01
1.5
1.0
0.5
0.0
0.1
10
1
20
0
V CC = 480V
V GE = 15V
T J = 25°C
I C = 25A
R G = 5.0Ω
V GE = 15V
V CC = 480V
40
10
0.1
T J , Junction Temperature (°C)
R G , Gate Resistance ( Ω )
60
20
80
E OFF
30
1
100
E ON
40
Document Number: 94539
120
I C = 12.5A
I C = 25A
I C = 50A
50
140
Revision: 01-Mar-09
160
60