TGA8310-SCC TriQuint, TGA8310-SCC Datasheet

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TGA8310-SCC

Manufacturer Part Number
TGA8310-SCC
Description
Wireless Accessories 2.0-20GHz LNA AGC
Manufacturer
TriQuint
Datasheet

Specifications of TGA8310-SCC

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004329

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Part Number
Manufacturer
Quantity
Price
Part Number:
TGA8310-SCC
Manufacturer:
Triquint
Quantity:
1 400
2 - 20 GHz Low Noise Amplifier
Description
The TriQuint TGA8310-SCC is a monolithic low noise distributed amplifier, which operates
from 2 to 20 GHz. Typical noise figure is 4 dB. Nine 122 um gatewidth FETs typically
provide 17.5 dBm of output power at 1 dB gain compression and 9 dB typical small signal
gain. Typical input return loss is 17 dB from 2 to 20 GHz. Typical output return loss is 20
dB. Ground is provided to the circuitry through vias to the backside metallization
The TGA8310-SCC low noise distributed amplifier is suitable for a variety of wideband
electronic warfare systems such as radar warning receivers, electronic counter measures,
decoys, jammers and phased array systems.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy
attachment methods as well as the thermocompression and thermosonic wire bonding
processes. The TGA8310-SCC is supplied in chip form and is assembled using automated
equipment.
TriQuint Semiconductor Texas Phone : (972)994 8465
Key Features and Performance
• 2 to 20- GHz Frequency Range
• 3.5 dB Noise Figure Midband
• 1.4:1 Typical Input/Output SWR
• 17.5 dBm Output Power at 1 dB Gain
• 9 dB Typical Gain
• 4.1 x 2.4 x 0.1 mm (0.162 x 0.093 x
Compression
0.004 in.)
Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGA8310-SCC
June 12, 2002
1

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TGA8310-SCC Summary of contents

Page 1

... Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. The TGA8310-SCC is supplied in chip form and is assembled using automated equipment. TriQuint Semiconductor Texas Phone : (972)994 8465 ...

Page 2

... STD 0.5 2.1 STD 0.5 2.1 STD 6 30 STD 6 30 STD 42.7 79.3 STD 36.4 67.6 STD 173.0 321.0 STD 31.8 59.1 are negative Fax: (972)994 8504 Web: www.triquint.com June 12, 2002 TGA8310-SCC NOTES 1 5 For maximum life UNITS ...

Page 3

... Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-to- source voltage (V ) measured BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Fax: (972)994 8504 Web: www.triquint.com June 12, 2002 TGA8310-SCC . and recorded as and recorded BDGS 3 ...

Page 4

... GHz GHz GHz GHz GHz GHz GHz GHz GHz o Fax: (972)994 8504 Web: www.triquint.com June 12, 2002 TGA8310-SCC VALUE UNITS TYP MAX dB 5.2 dB 6.2 dBm 29.5 27.0 dBm 27.5 26.5 27.0 32.5 29.5 dBm 29.0 28.0 -29.0 dBc* -24.5 -19.5 -18.0 dBc* -15 ...

Page 5

... THERMAL INFORMATION PARAMETER R Thermal resistance (channel to backside) QJC TriQuint Semiconductor Texas Phone : (972)994 8465 Product Data Sheet TABLE V TEST CONDITIONS NOM UNIT V = CTRL + 1 Fax: (972)994 8504 Web: www.triquint.com June 12, 2002 TGA8310-SCC °C ...

Page 6

... POWER GAIN TYPICAL NOISE FIGURE TYPICAL OUTPUT POWER P1dB TriQuint Semiconductor Texas Phone : (972)994 8465 Frequency (GHz Frequency (GHz Frequency (GHz) Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC V = 1.5 V CTRL 25° 1.5 V CTRL 25° 1.5 V CTRL 25° ...

Page 7

... TYPICAL 0 INPUT RETURN LOSS TYPICAL OUTPUT 6 RETURN LOSS TriQuint Semiconductor Texas Phone : (972)994 8465 Frequency (GHz Frequency (GHz) Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC V = 1.5 V CTRL 25° 1.5 V CTRL 25° ...

Page 8

... T = 25° 1 CTRL Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC S GAIN ANG(°) (dB ) 0.12 -133 8.8 0.08 -152 8.8 4 0.05 180 8.8 0.04 134 8.8 0.04 86 8.9 0. ...

Page 9

... T = 25° 1 CTRL Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC S GAIN ANG(°) (dB ) 0.22 -19 10.4 0.19 -62 10.2 0.17 -98 9.9 0.16 -132 9.7 0.14 -162 9.6 0.12 169 9 ...

Page 10

... EQUIVALENT SCHEMATIC TriQuint Semiconductor Texas Phone : (972)994 8465 Product Data Sheet June 12, 2002 TGA8310-SCC Fax: (972)994 8504 Web: www.triquint.com 10 ...

Page 11

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone : (972)994 8465 Mechanical Characteristics Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC 11 ...

Page 12

... Volt Bias GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone : (972)994 8465 Chip Assembly and Bonding Diagrams Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet June 12, 2002 TGA8310-SCC 12 ...

Page 13

... RECOMMENDED ASSEMBLY DIAGRAM, 5 Volt Bias GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone : (972)994 8465 Product Data Sheet June 12, 2002 TGA8310-SCC Fax: (972)994 8504 Web: www.triquint.com 13 ...

Page 14

... Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. TriQuint Semiconductor Texas Phone : (972)994 8465 Product Data Sheet June 12, 2002 TGA8310-SCC Fax: (972)994 8504 Web: www.triquint.com 14 ...

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