TGS2302 TriQuint, TGS2302 Datasheet

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TGS2302

Manufacturer Part Number
TGS2302
Description
Wireless Accessories 4-20GHz SPDT VPIN Switch
Manufacturer
TriQuint
Datasheet

Specifications of TGS2302

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1032682

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGS2302
Manufacturer:
Triquint
Quantity:
1 400
4 - 20 GHz VPIN SPDT Switch
TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
-10
-20
-30
-40
-50
-60
-70
-0.5
-1.5
-2.5
-3.5
0
-1
-2
-3
-4
0
4
4
Measured Fixtured Data
6
6
8
Icontrol = ± 20mA
8
Frequency (GHz)
Frequency (GHz)
10
10
12
12
14
14
16
16
18
18
20
20
Key Features
Primary Applications
Product Description
The TriQuint TGS2302 is a 4-20 GHz Single
Pole Double Throw (SPDT) Switch. This part
is designed using TriQuint’s proven standard
VPIN production process.
The TGS2302 provides a nominal 0.9 dB
insertion loss, 12 dB return loss, and 35 dB
isolation.
The TGS2302 integrates DC blocking
capacitors on all ports and includes decoupled
DC bias pads to reduce the number of off-chip
components.
The part is ideally suited for EW receivers,
radar, and communication systems.
Evaluation Boards are available upon request.
Lead-free and RoHS compliant.
Datasheet subject to change without notice.
4-20 GHz High Isolation SPDT
< 0.9 dB Typical Insertion Loss
35 dB Nominal Isolation
12 dB Typical Return Loss
On-Chip Bias Network
DC blocked at RF ports
Chip dimensions: 2.24 x 1.63 x 0.10 mm
EW Receivers
Radar
Communications Systems
(0.087 x 0.063 x 0.004 in)
TGS2302
May 2008
1

Related parts for TGS2302

TGS2302 Summary of contents

Page 1

... Primary Applications • • • Product Description The TriQuint TGS2302 is a 4-20 GHz Single Pole Double Throw (SPDT) Switch. This part is designed using TriQuint’s proven standard VPIN production process. The TGS2302 provides a nominal 0.9 dB insertion loss return loss, and 35 dB isolation ...

Page 2

... Isolated * Typical DC voltage to achieve ± Icontrol node is 2.6-2.7 V TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS Parameter 1/ are both per bias pad. TABLE II FUNCTION TABLE RF-A RF-B Isolated Low-Loss TGS2302 Value + dBm 0. 320 C 0 -65 to 150 C Icontrol-A* ...

Page 3

... A Icontrol = ± 20mA THROUGH PATH IDENTIFICATION RF Input to RF Output A RF Input to RF Output B RF Input to RF Output A RF Input to RF Output B RF Input to RF Output A RF Input to RF Output B TGS2302 TEST NOMINAL CONDITION – 20 GHz 0 – 20 GHz – 20 GHz – 20 GHz ...

Page 4

... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Frequency (GHz) TGS2302 May 2008 ...

Page 5

... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Input Power (dBm) TGS2302 Input Output GHz 8 GHz 12 GHz May 2008 ...

Page 6

... Icontrol A RF output A TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Equivalent Schematic RF Input TGS2302 Icontrol B RF Output B 6 May 2008 ...

Page 7

... Output A) 0.193 x 0.243 (0.008 x 0.010) (RF Input) 0.243 x 0.193 (0.010 x 0.008) (Icontrol-A) 0.105 x 0.132 (0.004 x 0.005) (Icontrol-B) 0.105 x 0.132 (0.004 x 0.005) (RF Output B) 0.193 x 0.243 (0.008 x 0.010) TGS2302 2.106 [0.082] 3 1.478 [0.058] 4 0.975 [0.038] 5 0.676 [0.026] 2.062 [0.080] 2.240 [0.087] 7 May 2008 ...

Page 8

... Icontrol-B) use on-chip resistors for diode current control. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Drawing Icontrol-A TQS 2006 RF Output B TGS2302 Icontrol-B 8 May 2008 ...

Page 9

... Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes TGS2302 9 May 2008 ...

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