TGA8344-SCC TriQuint, TGA8344-SCC Datasheet

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TGA8344-SCC

Manufacturer Part Number
TGA8344-SCC
Description
Wireless Accessories 2.0-18GHz LNA AGC
Manufacturer
TriQuint
Datasheet

Specifications of TGA8344-SCC

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004385

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2 - 18 GHz Low Noise Amplifier
Description
The TriQuint TGA8344-SCC features two cascaded monolithic low-noise distributed
amplifiers with on-chip bias operating from 2 to 18 GHz. This die offers the
advantage of high gain, typically 19 dB, in compact die size with simplified biasing
configuration. Noise figure is typically 4 dB. The two cascade amplifiers have
eighteen 122 um gatewidth FETs providing 16 dBm of output power at 1 dB gain
compression. Input return loss is typically 14 dB from 2 to 18 GHz and output return
loss is typically 13 dB. Ground is provided to the circuitry through vias to the
backside metallization. The TGA8344-SCC small size and high gain make it
suitable for use in a variety of wide-band electronic commercial and warfare
systems.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression wire-bonding
processes. The TGA8344-SCC is supplied in chip form and is readily assembled
using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Key Features and Performance
2 to 18 GHz Frequency Range
Typical 4 dB Noise Figure at Midband
16 dBm Typical Output Power at 1 dB
Gain Compression
19 dB Typical Gain
Typical Input SWR 1.5:1 and Output
SWR 1.6:1
3.9878 x 3.810 x 0.1016 mm (0.1570
0.150 x 0.0040 in.)
Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGA8344-SCC
April 3, 2003
1

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TGA8344-SCC Summary of contents

Page 1

... Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression wire-bonding processes. The TGA8344-SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet ...

Page 2

... TYPICAL SMALL-SIGNAL POWER GAIN TYPICAL NOISE FIGURE TYPICAL OUTPUT POWER P 1dB TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC Fax: (972)994 8504 Web: www.triquint.com 2 ...

Page 3

... TYPICAL RETURN LOSS TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC Fax: (972)994 8504 Web: www.triquint.com 3 ...

Page 4

... C base-plate temperature, derate linearly at the rate of 11.2mW Operating channel temperature, T recommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC TABLE I MAXIMUM RATINGS * (unless otherwise noted directly affects the device MTTF ...

Page 5

... STD – Standard Test Conditions (see Table IV for definitions) TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TABLE II DC PROBE TESTS (100 Nominal) A TEST CONDITIONS 3/ STD STD STD STD STD STD STD Fax: (972)994 8504 Web: www.triquint.com TGA8344-SCC LIMITS UNITS MAX MIN 110 mA 307 186 mS 340 0.5 V 1.8 ...

Page 6

... TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TABLE III RF CHARACTERISTICS ( Nominal) A MEASUREMENT CONDITIONS + 8V 120 – 18 GHz 2 – 16 GHz 18 GHz 2 – 18 GHz 2 – 18 GHz 2 – 14 GHz 16 – 18 GHz Fax: (972)994 8504 Web: www.triquint.com TGA8344-SCC VALUE UNITS MIN MAX dBm 12 dBm -7.7 dB -7 ...

Page 7

... BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Fax: (972)994 8504 Web: www.triquint.com TGA8344-SCC Test Conditions ) is swept from 0 recorded as VDSP. DSS is swept between 0 ...

Page 8

... 120 mA Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet TGA8344-SCC S GAIN ANG(°) (dB ) 155 0.32 118 27.1 0.27 24 26.2 157 0.30 -24 24.6 134 0.31 -57 23.5 114 0.31 -85 22 ...

Page 9

... Center of FET of either TGA8344 half-amplifier. ** Total power dissipation for TGA8344: divide obtain the single-FET power dissipation. EQUIVALENT SCHEMATIC TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC TES T C ONDITIONS F ET 25° C Bas e , 31.83° C Channe l*, 205 ...

Page 10

... Two on-chip to on-chip wire bonds are needed for bond pads 3 and 13. Close placement of external components is essential to stability. Refer to TriQuint’s Gallium Arsenide Products Designers’ Information on our website under Application Information. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC Fax: (972)994 8504 Web: www.triquint.com 10 ...

Page 11

... MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet TGA8344-SCC Fax: (972)994 8504 Web: www.triquint.com 11 ...

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