MKP1V160G ON Semiconductor, MKP1V160G Datasheet - Page 4

• Manufacturer Part Number: MKP1V160G
• Description: SIDAC BIDIR 0.9A 160V DO-41
• Manufacturer: ON Semiconductor

Specifications of MKP1V160G

• Current - Peak Output: 900mA
• Voltage - Breakover: 150 ~ 170V
• Current - Hold (ih) (max): 100mA
• Current - Breakover: 200µA
• Package / Case: DO-204AL, DO-41, Axial
• Thyristor Case: DO-41
• No. Of Pins: 2
• Peak Reflow Compatible (260 C): Yes
• Holding Current Max Ih: 100mA
• On State Rms Current It(rms): 0.9A
• Leaded Process Compatible: Yes
• Peak Repetitive Off-state Voltage, Vdrm: 90V
• Rohs Compliant: Yes
• Breakover Current Ibo Max: 4 A
• Rated Repetitive Off-state Voltage Vdrm: 90 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Operating Temperature Range: -40°C To +125°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.9
0.8
−60
0.1
−40
0.2
Figure 6. Typical Breakover Voltage
−20
T
J
, JUNCTION TEMPERATURE (°C)
0.5
0
20
1.0
40
100
1.0
10
2.0
60
I
THERMAL CHARACTERISTICS
PK
80
Z
DT
where:
DT
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
qJL
p
5.0
tw
) = normalized value of transient resistance at time t
JL
JL
(t) = R
Figure 5. Thermal Response
= P
= the increase in junction temperature above the
Figure 8. Pulse Rating Curve
100
0.1
MKP1V120 Series
pk
10%
qJL
http://onsemi.com
10
R
120
qJL
• r(t)
t
w
[r(t)]
, PULSE WIDTH (ms)
t, TIME (ms)
140
20
4
1.0
1.4
1.2
1.0
0.8
0.6
0.4
50
−60
t
p
−40
100
10
TIME
Figure 7. Typical Holding Current
−20
200
T
J
p
, JUNCTION TEMPERATURE (°C)
.
0
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of T
temperature may be determined by:
100
20
500
40
1.0 k
T
J
= T
60
L
2.0 k
+ DT
80
JL
L
100
, the junction
5.0 k
120
10 k
140