VUO120-16NO1 IXYS, VUO120-16NO1 Datasheet - Page 4

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VUO120-16NO1

Manufacturer Part Number
VUO120-16NO1
Description
RECT BRIDGE 3PH 1600V V2-PACK
Manufacturer
IXYS
Datasheet

Specifications of VUO120-16NO1

Voltage - Peak Reverse (max)
1600V
Current - Dc Forward (if)
121A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
V2-PAK
Vrrm, (v)
1600
Vrsm, (v)
1700
Idavm, (a)
121
@ Th, (°c)
-
@ Tc, (°c)
75
Ifsm, 10 Ms, Tvj = 45°c, (a)
650
Vt0, (v)
0.80
Rt, (mohms)
6.1
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.00
Rthjh, Per Chip, (k/w)
1.30
Package Style
V2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Fig. 1 Forward current versus voltage
Fig. 4
Fig. 6 Transient thermal impedance junction to case
© 2007 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
I
P
F
tot
150
120
150
100
K/W
1.0
0.8
0.6
0.4
0.2
0.0
90
60
30
50
W
A
0
0
0.01
0.0
drop per diode
Power dissipation versus direct output current and ambient temperature, sine 120°
0
T
T
VJ
VJ
20
= 25°C
= 150°C
0.5
40
60
1.0
80
V
F
1.5
100 120 140
0.1
I
V
d(AV)M
2.0
Fig. 2 Surge overload current
I
FSM
A
700
600
500
400
300
200
100
0
A
0.001
0
20
50 Hz, 80% V
40
T
VJ
1
0.01
= 150°C
60
RRM
80 100 120 140
T
VJ
T
amb
= 45°C
0.1
t
t
R
0.7 KW
1
1.4 KW
2
3
5
thKA
s
s
KW
KW
KW
KW
:
VUO 155
°C
1
10
I
d(AV)M
Fig. 3 I
Fig. 5 Max. forward current versus
I
Constants for Z
2
t
180
160
140
120
100
1
2
3
4
10
A
10
80
60
40
20
i
2
A
0
s
4
3
1
0
V
case temperature
2
R
t versus time per diode
20 40 60 80 100 120 140
= 0 V
R
0.002817
0.1183
0.4479
0.231
thi
2
(K/W)
thJC
T
VJ
calculation:
3
= 45°C
VUO 155
4 5 6 7 8 9
T
T
t
0.01
0.05
0.14
0.5
VJ
C
i
(s)
= 150°C
t
20071019a
ms
4 - 4
°C
10

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