VUE50-12NO1 IXYS, VUE50-12NO1 Datasheet
VUE50-12NO1
Manufacturer Part Number
VUE50-12NO1
Description
DIODE BRIDGE FAST 1200V V1-A
Manufacturer
IXYS
Datasheet
1.VUE50-12NO1.pdf
(2 pages)
Specifications of VUE50-12NO1
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
50A
Diode Type
Three Phase
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
PCB
Package / Case
Screw Mount
Phase Type
Three Phase
Number Of Elements
1
Peak Rep Rev Volt
1.2kV
Peak Non-repetitive Surge Current (max)
210A
Avg. Forward Curr (max)
50A
Forward Voltage
2.55V
Operating Temp Range
-40C to 150C
Pin Count
5
Mounting
Screw
Operating Temperature Classification
Automotive
Vrrm, (v)
1200
Vrsm, (v)
-
Idavm, (a)
50
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
200
Vt0, (v)
1.65
Rt, (mohms)
18.2
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
-
Rthjh, Per Chip, (k/w)
1.5
Package Style
V1-A-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Three Phase
Rectifier Bridge
Symbol
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
I
t
d
d
a
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1200
V
dAV
FSM
2
R
RM
rr
T
t
VJ
VJM
stg
S
A
ISOL
F
T0
thJS
d
RSM
V
1200
V
RRM
V
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque
typ.
V
V
I
For power-loss calculations only
per diode,
per module,
I
V
I
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Test Conditions
Test Conditions
ISOL
F
F
F
K
VJ
VJ
VJ
VJ
R
R
R
R
R
R
R
= 30 A, -di
= 1 A; -di/dt = 100 A/ms; V
= 85°C, module
= 0
= 0
= 0
= 0
= 540 V, L £ 0.05 mH, T
= 45°C;
= T
= 45°C
= T
£ 1 mA
= V
= 0.8 V
= 30 A;
VJM
VJM
RRM
Type
VUE 50-12NO1
RRM
F
/dt = 240 A/ms
120° rect.
120° rect.
t = 10 ms
t = 8.3 ms (60 Hz), sine
t = 10 ms
t = 8.3 ms (60 Hz), sine
t = 10 ms
t = 8.3 ms (60 Hz), sine
t = 10 ms
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
(M5)
(10-32UNF)
T
T
T
VJ
VJ
VJ
VJ
= 25°C
= 125°C
= 25°C
R
= 100°C
= 30 V, T
(50 Hz), sine
(50 Hz), sine
(50 Hz), sine
(50 Hz), sine
VJ
= 25°C
10
8
6
Characteristic Values
typ.
16
40
-40...+150
-40...+125
4
Maximum Ratings
2 - 2.5
18-22
3000
3600
200
210
185
195
200
180
170
160
150
max
50
35
0.75
2.55
1.65
18.2
0.25
12.7
1.5
9.4
18
60
50
7
m/s
lb.in.
K/W
K/W
mm
mm
mA
mA
mW
Nm
A
A
A
A
V~
V~
ns
°C
°C
°C
V
V
A
A
A
A
A
A
g
1/2
4/5
2
2
2
2
s
s
s
s
2
V
I
t
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
Use output terminals in parallel connections
dAV
rr
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Leads suitable for PC board soldering
Creeping and creepage-distance
fulfils UL 508/CSA 22.2NO14 and
VDE 0160 requirements
Epoxy meet UL94V-O
UL registered E72873
Supplies for DC power equipment
Input rectifiers for PWM inverter
Output filter for PWM inverter
Reduced EMI/RFI
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
= 1200 V
= 50 A
= 40 ns
1 2
6
4 5
8
VUE 50
10
1 - 2
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VUE50-12NO1 Summary of contents
Page 1
... Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Maximum Ratings 50 (50 Hz), sine ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus junction temperature. 2.0 K/W 1.5 Z thJS 1.0 0.5 0.0 0.001 0.01 0.1 t Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved dAVM 100 125 150 T S Fig. 2 Maximum forward current at heatsink temperature T ...