VUC36-12GO2 IXYS, VUC36-12GO2 Datasheet - Page 2
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VUC36-12GO2
Manufacturer Part Number
VUC36-12GO2
Description
DIODE BRIDGE FAST 1200V KAMM-MOD
Manufacturer
IXYS
Datasheet
1.VUC36-12GO2.pdf
(2 pages)
Specifications of VUC36-12GO2
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
34A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.5µs
Mounting Type
PCB
Package / Case
KAMM
Vrrm, (v)
1200
Vvrms, (v)
400
Idavm, (a )
34
@ Th, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a), Thyristor
300
Vt0, (v), Thyristor
1.2
Rt, (mohms), Thyristor
16
Tvjm, (°c), Thyristor
125
Rthjc, Per Chip, (k/w), Thyristor
1.4
Rthjh, Per Chip, (k/w), Thyristor
2
Ifsm, 10 Ms, Tvj = 45°c, (a), Diode
400
Vt0, (v), Diode
0.85
Rt, (mohms), Diode
1
Tvjm, (°c), Diode
125
Rthjc, Per Chip, (k/w), Diode
0.9
Rthjh, Per Chip, (k/w), Diode
1.1
Package Style
Kamm-Modul
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUC36-12GO2
Manufacturer:
SAMSUNG
Quantity:
450
Symbol
I
V
V
r
V
I
V
I
I
I
t
t
t
R
R
d
d
a
© 2010 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
GT
L
R
GD
H
gd
q
T
rr
S
A
F
T0
GT
GD
, I
thJC
thJH
, V
D
T
Conditions
V
I
For power-loss calculations only
V
V
V
V
t
di
V
V
di
I
V
I
-di/dt = 10 A/μs
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
F
G
T
F
R
D
D
D
D
D
D
R
G
G
= 55 A; I
= 15 A; t
= 10 A; V
= 30 μs; I
/dt = 0.3 A/μs
/dt = 0.3 A/μs
= V
= 6 V
= 6 V
=
=
= 6 V; R
= ½V
= 100 V; dv/dt = 20 V/μs; V
2
2
/
/
3
3
RRM
V
V
DRM
DRM
DRM
; V
T
p
GK
R
; I
G
= 45 A
= 300 μs; -di/dt = 10 A/μs; T
D
= ½V
= 0.3 A
G
= V
= ∞
= 0.3 A
DRM
RRM
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= T
= 25°C
= 25°C
= 25°C
= 25°C
= T
= T
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
D
VJM
VJM
VJM
=
2
/
3
V
DRM
VJ
= 125°C
Characteristic Values
<
< 0.3
<1.85
< 1.5
0.233
0.333
Diode Thyristor
1.2
1.4
2.0
16
5
<
<
<
<
<
<
<
<
<
<
typ. 130
0.85
300 mA
100 mA
0.3 mA
1.4
1.5
0.2
2.5
0.9 K/W
1.1 K/W
50 m/s
10 mΩ
80 mA
5 mA
5 mA
7 mm
7 mm
-
- K/W
- K/W
μs
μs
μs
V
V
V
V
2
VUC 36
VUC 36
20100709b
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