VUO16-16NO1 IXYS, VUO16-16NO1 Datasheet - Page 3

RECT BRIDGE 3PH 20A 1600V V1-A

VUO16-16NO1

Manufacturer Part Number
VUO16-16NO1
Description
RECT BRIDGE 3PH 20A 1600V V1-A
Manufacturer
IXYS
Datasheet

Specifications of VUO16-16NO1

Voltage - Peak Reverse (max)
1600V
Current - Dc Forward (if)
20A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
V1-A
Phase Type
Three Phase
Number Of Elements
1
Peak Rep Rev Volt
1.6kV
Peak Non-repetitive Surge Current (max)
106A
Avg. Forward Curr (max)
20A
Rev Curr
300uA
Forward Voltage
1.15V
Package Type
ISOPLUS i5-Pac
Operating Temp Range
-40C to 130C
Pin Count
7
Mounting
Screw
Operating Temperature Classification
Automotive
Vrrm, (v)
1600
Vrsm, (v)
1700
Idavm, (a)
15
@ Th, (°c)
90
@ Tc, (°c)
-
Ifsm, 10 Ms, Tvj = 45°c, (a)
100
Vt0, (v)
0.80
Rt, (mohms)
50
Tvjm, (°c)
130
Rthjc, Per Chip, (k/w)
-
Rthjh, Per Chip, (k/w)
4.50
Package Style
V1-A-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VUO16-16NO1
Manufacturer:
IXYS
Quantity:
387
Part Number:
VUO16-16NO1
Quantity:
83
Zth
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
P
JK
I
F
tot
K/W
30
25
20
15
10
80
70
60
50
40
30
20
10
A
W
5
0
0
5
4
3
2
1
0
10
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
-3
T
T
5
0.5
VJ
VJ
voltage drop per diode
= 25°C
= 130°C
10
1.0
10
-2
15
1.5
20
ma x.
typ.
2.0
V
25
F
10
I
V
dAVM
-1
A
2.5
0
I
FSM
25
100
Fig. 2 Surge overload current per diode
80
60
40
20
A
0
10
10
-3
0
50
I
FSM
: Crest value. t: duration
75
10
Zth
-2
JK
10
10 0
1
R
0.5
1
1.5
2
3
4
6
thKA
10
s
12 5
K/W
-1
t
t
50 Hz
0.8 x V
T
°C
A
s
150
10
RRM
2
10
0
I
dAVM
I
2
Constants for Z
100
d
A
t
10
25
20
15
10
2
A
s
5
0
1
2
3
4
i
1
0
Fig. 5 Maximum forward current
Fig. 3 I
25
T
R
VJ
at case temperature
(1-10 ms) per diode
thi
0.005
0.1
1.835
2.55
2
= 45°C
t versus time
50
(K/W)
thJC
calculation:
75
T
VUO 16
VJ
= 130°C
10 0
0.008
0.02
0.05
0.4
t
t
i
(s)
12 5
20100503a
ms
°C
3 - 3
T
K
150
1
0

Related parts for VUO16-16NO1