VBO22-08NO8 IXYS, VBO22-08NO8 Datasheet - Page 2
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VBO22-08NO8
Manufacturer Part Number
VBO22-08NO8
Description
DIODE BRIDGE 17A 800V FO-B-B
Manufacturer
IXYS
Datasheet
1.VBO22-08NO8.pdf
(2 pages)
Specifications of VBO22-08NO8
Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
17A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
QC Terminal
Package / Case
Screw Mount
Vrrm, (v)
800
Vvrms, (v)
250
Idavm, (a)
17
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
380
Vt0, (v)
0.85
Rt, (mohms)
12
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
8.20
Rthjh, Per Chip, (k/w)
9.40
Package Style
FO-B-B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
30
25
20
15
10
50
40
30
20
10
0
5
0
10
8
6
4
2
Fig. 1 Forward current versus
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
voltage drop per diode
150°C
10
25°C
0,01
V
rec. 120°
rec. 60°
rec. 30°
sin. 180°
I
FAVM
F
1
DC
[V]
[A]
20
0,1
1.5
0
t [s]
0.95
9.95
1.95
3.95
0.45
1
50
Fig. 2 Surge overload current per diode
0.05
1.9
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
10
amb
= R
0
I
thCA
[K]
FSM
[K/W]
10
100
: Crest value. t: duration
T
VJ
10
380
= 45°C
1
0 V
½ V
1 V
t [ms]
I
FSM
Z
Z
RRM
RRM
RRM
thJK
thJC
150
[A]
T
110
130
150
VJ
50
70
90
10
= 150°C
340
2
10
3
10
10
30
20
10
3
2
0
1
Fig. 3 I
Fig. 5 Maximum forward current
T
VJ
per diode or thyristor
at case temperature
50
2
= 45°C
t versus time (1-10 ms)
2
T
t [ms]
C
100
[°C]
T
VJ
4
= 150°C
VBO 22
sin. 180°
rec. 120°
rec. 60°
rec. 30°
150
6
DC
10
200
20100706c
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