FUO50-16N IXYS, FUO50-16N Datasheet - Page 2

• Manufacturer Part Number: FUO50-16N
• Description: RECT BRIDGE FAST 3PHASE I4-PAC-5
• Manufacturer: IXYS

Specifications of FUO50-16N

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 50A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Vrrm, (v): 1600
• Vrsm, (v): 1700
• Idavm, (a): 50
• @ Th, (°c): -
• @ Tc, (°c): 90
• Ifsm, 10 Ms, Tvj = 45°c, (a): 200
• Vt0, (v): -
• Rt, (mohms): -
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 2.10
• Rthjh, Per Chip, (k/w): 3.20
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
P
Z thJC
I
F
tot
K/W
180
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
W
60
50
40
30
20
10
80
60
40
20
A
0.001
0
0
0.0
0
Fig. 1 Forward current
Fig. 4 Power dissipation versus direct output current and ambient temperature;
Fig. 6 Transient thermal impedance junction to case Z
10
T
0.5
VJ
vs. voltage drop per leg
sinusoidal 120°
=125°C
20
1.0
I
d(AV)M
0.01
30
V
T
F
VJ
1.5
= 25°C
40
V
A
2.0
0
I
FSM
0.1
30
350
300
250
200
150
100
A
50
0.001
0
Fig. 2 Surge overload current
f = 50 Hz
V
R
= 0.8V
60
T
VJ
= 125°C
thjc
0.01
T
RRM
A
1
90
T
R
VJ
thHA
= 25°C
t
t
0.1
120
[K/W]
0.2
0.5
1.5
1
2
3
5
°C
s
150
10
1
s
I
2
I
t
d(AV)M
1000
A
100
2
60
50
40
30
20
10
s
A
0
1
0
Fig. 3 t versus time per diode
Fig. 5 Max. forward current vs. case
Constants for Z
V
1
2
3
4
i
R
= 0 V
temperature I
R
40
0.1286
0.2651
0.5473
FUO 50-16N
thi
1.159
(K/W)
T
VJ
= 45°C
80
thJc
t
T
d(AVM)
T
H
VJ
0.1015
0.1026
0.4919
calculation
120
= 125°C
t
i
0.62
= f (T
(s)
ms
°C
2 - 2
case
160
10
)