FBE22-06N1 IXYS, FBE22-06N1 Datasheet - Page 2

• Manufacturer Part Number: FBE22-06N1
• Description: RECT BRIDGE FAST SGL I4-PAC-5
• Manufacturer: IXYS

Specifications of FBE22-06N1

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 20A
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Peak Non-repetitive Surge Current (max): 40A
• Avg. Forward Curr (max): 20A
• Rev Curr: 60uA
• Package Type: ISOPLUS i4-Pac
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Max Surge Current: 40 A
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 60 uA
• Maximum Operating Temperature: + 150 C
• Length: 19.91 mm
• Width: 5.03 mm
• Height: 20.88 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vrrm, (v): 600
• Vvrms, (v): -
• Idavm, (a): 20
• @ Tc, (°c): 90
• Ifsm, 10 Ms, Tvj = 45°c, (a): 40
• Vt0, (v): -
• Rt, (mohms): -
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 3.5
• Rthjh, Per Chip, (k/w): 3.65
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
Component
Symbol
T
T
V
F
Symbol
d
d
R
Weight
VJ
stg
C
S
S
ISOL
thCH
,
,
d
d
A
A
Conditions
I
mounting force with clip
Conditions
pin - pin
pin - backside metal
with heatsink compound
ISOL
< 1 mA; 50/60 Hz
min.
1.7
5.5
Characteristic Values
Maximum Ratings
0.15
typ.
-55...+150
-55...+125
9
20 ... 120
2500
max.
Die konvexe Form des Substrates ist typ. < 0,05 mm
über der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over
plastic surface level of device bottom side
K/W
mm
mm
V~
°C
°C
N
g
FBE 22-06N1
20081125a
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