GBJ1004-G Comchip Technology, GBJ1004-G Datasheet - Page 2

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GBJ1004-G

Manufacturer Part Number
GBJ1004-G
Description
BRIDGE DIODE 10A 400V GBJ
Manufacturer
Comchip Technology
Datasheet

Specifications of GBJ1004-G

Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
10A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
100
1.0
10
10.0
8.0
2.0
6.0
4.0
1.0
Glass Passivated Bridge Rectifiers
1.0
MDS0912004A
0
FIG.1-FORWARD CURRENT DERATING CURVE
T
J
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
=25°C,f=1MH
FIG.3-TYPICAL JUNCTION CAPACITANCE
20
WITH HEATSINK
CASE TEMPERATURE, ℃
REVERSE VOLTAGE,(VOLTS)
40
WITHOUT HEATSINK
RATINGS AND CHARACTERISTIC CURVES GBJ10005-G thru GBJ1010-G
Z
60
10.0
80
100
1000
100
1.0
10
0.1
120
0
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-TYPICAL REVERSE CHARACTERISTICS
140
20
100
T
T
T
T
J
J
J
J
=100°C
=125°C
=50°C
=25°C
40
60
220
0.01
1.0
10
0.1
0
1
0
80
FIG.4-TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
0.2
2
FIG.2-MAXMUN NON-REPETITIVE
100
0.4
NUMBER OF CYCLES AT 60Hz
SURGE CURRENT
0.6
5
0.8
10
T
SINGLE -SINE- WAVE
(JEDEC METHOD)
PULSE WIDTH 300us
J
=150°C
1.0
20
T
J
= 25°C
1.2
1.4
50
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100
1.8

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