GBPC608/1 Vishay, GBPC608/1 Datasheet - Page 3
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GBPC608/1
Manufacturer Part Number
GBPC608/1
Description
RECTIFIER BRIDGE 6A 800V GBPC6
Manufacturer
Vishay
Datasheet
1.GBPC606-E451.pdf
(4 pages)
Specifications of GBPC608/1
Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBPC6
Product
Single Phase Bridge
Peak Reverse Voltage
800 V
Maximum Rms Reverse Voltage
560 V
Forward Continuous Current
6 A
Max Surge Current
175 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
16 mm
Width
16 mm
Height
5.08 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
GBPC608
GBPC608
GBPC608/1
GBPC608/1GI
GBPC608
GBPC608/1
GBPC608/1GI
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88613
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
A
40
= 125 °C
1.0
T
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
= 100 °C
For technical questions within your region, please contact one of the following:
T
J
= 25 °C
1.2
60
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.4
Polarity shown on side of case: Positive lead by beveled corner
80
Hole For #6 Screw
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
1.6
0.042 (1.07)
0.038 (0.96)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.8
DIA.
DIA.
Case Style GBPC6
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
0.445 (11.30)
0.405 (10.29)
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
0.750 (19.05)
GBPC6005 thru GBPC610
Vishay General Semiconductor
MIN.
50 - 400 V
600 - 1000 V
0.1
t - Heating Time (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3