GBU8B-E3/45 Vishay, GBU8B-E3/45 Datasheet - Page 2

• Manufacturer Part Number: GBU8B-E3/45
• Description: DIODE GPP 8A 100V GPP INLINE GBU
• Manufacturer: Vishay

Specifications of GBU8B-E3/45

• Voltage - Peak Reverse (max): 100V
• Current - Dc Forward (if): 3.9A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 100 V
• Maximum Rms Reverse Voltage: 70 V
• Max Surge Current: 200 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 22.3 mm
• Width: 3.56 mm
• Height: 18.8 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 100V
• Rms Voltage (max): 70V
• Peak Non-repetitive Surge Current (max): 200A
• Avg. Forward Curr (max): 8A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case GBU
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: GBU8B-E3/51

GBU8A thru GBU8M
Vishay General Semiconductor
Notes:
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on P.C.B., 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum
instantaneous forward
voltage drop per diode
Maximum DC reverse
current at rated DC
blocking voltage per diode
Typical junction
capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION
PREFERRED P/N
GBU8J-E3/45
GBU8J-E3/51
A
= 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
Figure 1. Derating Curve Output Rectified Current
0
P.C.B. Mounting, T
0.47 x 0.47" (12 x 12 mm) Copper
Pads 0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
Heatsink Mounting, T
25
50
Temperature (°C)
UNIT WEIGHT (g)
A
C
TEST CONDITIONS
8.0 A
T
T
4 V, 1 MHz
[e-mail], [e-mail], [e-mail]
A
A
3.857
3.857
For technical questions within your region, please contact one of the following:
75
= 25 °C
= 125 °C
100
125
PREFERRED PACKAGE CODE
A
SYMBOL
SYMBOL
R
R
= 25 °C unless otherwise noted)
θJA
θJC
150
A
V
C
I
R
F
J
(2)
(1)(3)
= 25 °C unless otherwise noted)
45
51
GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M
GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M
Figure 2. Maximum Non-Repetitive Peak Forward Surge
250
200
150
100
211
50
0
BASE QUANTITY
1
250
20
Number of Cycles at 60 Hz
500
1.0
5.0
4.0
20
Current Per Diode
T
8.3 ms Single Half Sine-Wave
J
= 150 °C
10
DELIVERY MODE
Document Number: 88616
94
Paper tray
Tube
Revision: 15-Dec-08
100
UNIT
°C/W
UNIT
µA
pF
V