GBU8M-E3/51 Vishay, GBU8M-E3/51 Datasheet - Page 3
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GBU8M-E3/51
Manufacturer Part Number
GBU8M-E3/51
Description
DIODE GPP 8A 1000V GPP INLINE
Manufacturer
Vishay
Datasheet
1.GBU8A-E351.pdf
(4 pages)
Specifications of GBU8M-E3/51
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
3.9A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBU)
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Max Surge Current
200 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
8A
Forward Voltage Vf Max
1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
GBU8M-E3/45
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GBU8M-E3/51
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88616
Revision: 15-Dec-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 150 °C
0.6
50 - 400 V
600 - 1000 V
Instantaneous Forward Voltage (V)
20
T
J
= 125 °C
0.8
40
T
0.020 R (TYP.)
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.100 (2.54)
0.085 (2.16)
= 25 °C
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead by beveled corner
J
= 25 °C
1.2
80
1.4
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
1.6
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Type GBU
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
50 - 400 V
600 - 1000 V
0.140 (3.56)
0.130 (3.30)
0.1
GBU8A thru GBU8M
Reverse Voltage (V)
t - Heating Time (s)
1
0.026 (0.66)
0.020 (0.51)
0.085 (2.16)
0.075 (1.90)
9° TYP.
5° TYP.
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3