KBU4G-E4/51 Vishay, KBU4G-E4/51 Datasheet - Page 3
![DIODE 4A 400V KBU](/photos/16/3/160394/kbu_sml.jpg)
KBU4G-E4/51
Manufacturer Part Number
KBU4G-E4/51
Description
DIODE 4A 400V KBU
Manufacturer
Vishay
Datasheet
1.KBU4B-E451.pdf
(4 pages)
Specifications of KBU4G-E4/51
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
4A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (KBU)
Product
Single Phase Bridge
Peak Reverse Voltage
400 V
Maximum Rms Reverse Voltage
280 V
Max Surge Current
200 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
23.7 mm
Width
7.1 mm
Height
19.3 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
4A
Forward Voltage Vf Max
1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88656
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
50
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
T
1.0
J
60
= 100 °C
T
J
= 25 °C
1.1
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
150
100
75
50
25
0.052 (1.3)
0.048 (1.2)
0
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.1
0.165 (4.2)
0.185 (4.7)
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU4A thru KBU4M
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3