G2SB20-E3/51 Vishay, G2SB20-E3/51 Datasheet - Page 3
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G2SB20-E3/51
Manufacturer Part Number
G2SB20-E3/51
Description
DIODE GPP 1.5A 200V GBL
Manufacturer
Vishay
Datasheet
1.G2SB60-E345.pdf
(4 pages)
Specifications of G2SB20-E3/51
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
1.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBL)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
80 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
20.9 mm
Width
3.56 mm
Height
10.7 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88603
Revision: 15-Dec-08
100
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Reverse Voltage (V)
1
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
0.125 (3.17) x 45°
Chamfer
0.040 (1.02)
0.030 (0.76)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
10
0.050 (1.27)
0.040 (1.02)
Polarity shown on front side of case, positive lead beveled corner
0.080 (2.03)
0.060 (1.50)
100
Case Type GBL
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.825 (20.9)
0.815 (20.7)
0.01
100
G2SB20, G2SB60 & G2SB80
0.1
10
1
0.01
Figure 6. Typical Transient Thermal Impedance
0.022 (0.56)
0.018 (0.46)
Lead Depth
Vishay General Semiconductor
0.098 (2.5)
0.075 (1.9)
0.140 (3.56)
0.128 (3.25)
0.1
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
t - Heating Time (s)
1
10
www.vishay.com
100
3