GBU4B-E3/45 Vishay, GBU4B-E3/45 Datasheet - Page 3
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GBU4B-E3/45
Manufacturer Part Number
GBU4B-E3/45
Description
DIODE GPP 1PH 4A 100V GPP GBU
Manufacturer
Vishay
Specifications of GBU4B-E3/45
Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBU)
Product
Single Phase Bridge
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Max Surge Current
150 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
4A
Forward Voltage Vf Max
1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Bridge
RoHS Compliant
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
100V
Rms Voltage (max)
70V
Peak Non-repetitive Surge Current (max)
150A
Avg. Forward Curr (max)
4A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBU
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
GBU4B-E3/51
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88614
Revision: 15-Dec-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
50 - 400 V
600 - 1000 V
20
0.8
40
T
Pulse Width = 300 µs
1 % Duty Cycle
0.020 R (TYP.)
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
0.100 (2.54)
0.085 (2.16)
= 25 °C
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
1.0
J
For technical questions within your region, please contact one of the following:
= 25 °C
T
J
60
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead by beveled corner
= 125 °C
1.2
80
1.4
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
1.6
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Type GBU
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
1000
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
50 - 400 V
600 - 1000 V
0.140 (3.56)
0.130 (3.30)
0.1
GBU4A thru GBU4M
Reverse Voltage (V)
t - Heating Time (s)
1
0.026 (0.66)
0.020 (0.51)
0.085 (2.16)
0.075 (1.90)
9° TYP.
5° TYP.
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3