VSIB4A60-E3/45 Vishay, VSIB4A60-E3/45 Datasheet - Page 3

• Manufacturer Part Number: VSIB4A60-E3/45
• Description: DIODE 4A 600V SGL BRIDGE 4SIP
• Manufacturer: Vishay

Specifications of VSIB4A60-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 2.3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GSIB-5S)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89120
Revision: 14-Jul-09
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.3
20
Percent of Rated Peak Reverse Voltage (%)
30
Instantaneous Forward Voltage (V)
T
0.057 (1.45)
0.041 (1.05)
0.075 (1.90)
0.059 (1.50)
0.083 (2.10)
0.067 (1.70)
0.043 (1.10)
0.035 (0.90)
J
0.5
T
= 150 °C
J
40
= 150 °C
50
0.7
T
T
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J
J
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60
= 125 °C
= 125 °C
T
0.9
J
70
0.996 (25.3)
0.972 (24.7)
= 25 °C
T
J
= 25 °C
80
1.1
90
100
1.3
0.303 (7.7)
0.287 (7.3)
Case Style GSIB-3S
New Product
0.157 (4.0) Ref.
0.146 (3.70)
0.130 (3.30)
0.602 (15.3)
0.579 (14.7)
0.709 (18.0)
0.669 (17.0)
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
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Vishay General Semiconductor
VSIB4A20 thru VSIB4A80
0.382 (9.70)
0.366 (9.30)
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
0.031 (0.80)
0.024 (0.60)
1
0.189 (4.80)
0.173 (4.40)
0.150 (3.80)
0.134 (3.40)
0.114 (2.90)
0.098 (2.50)
Ø 0.134 (3.40)
Ø 0.122 (3.10)
10
10
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100
100
3