GBL08-E3/51 Vishay, GBL08-E3/51 Datasheet - Page 3

• Manufacturer Part Number: GBL08-E3/51
• Description: DIODE GPP 1PH 4A 800V GBL
• Manufacturer: Vishay

Specifications of GBL08-E3/51

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBL)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Max Surge Current: 150 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 20.9 mm
• Width: 3.56 mm
• Height: 10.7 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 800V
• Forward Current If(av): 4A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 800V
• Rms Voltage (max): 560V
• Peak Non-repetitive Surge Current (max): 150A
• Avg. Forward Curr (max): 4A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case GBL
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: GBL08-E3/45

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88609
Revision: 30-Apr-08
Figure 3. Typical Forward Voltage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
50 - 400 V
60 - 1000 V
20
0.8
40
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1.0
For technical questions within your region, please contact one of the following:
T
A
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.125 (3.17) x 45°
J
= 125 °C
= 25 °C
1.2
Chamfer
0.040 (1.02)
0.030 (0.76)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.050 (1.27)
0.040 (1.02)
T
Polarity shown on front side of case, positive lead beveled corner
0.080 (2.03)
0.060 (1.50)
A
80
= 25 °C
1.4
100
1.6
Case Type GBL
0.026 (0.66)
0.020 (0.51)
0.210 (5.3)
0.190 (4.8)
0.825 (20.9)
0.815 (20.7)
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.022 (0.56)
0.018 (0.46)
Lead Depth
Vishay General Semiconductor
0.098 (2.5)
0.075 (1.9)
0.140 (3.56)
0.128 (3.25)
50 - 400 V
600 - 1000 V
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.1
GBL005 thru GBL10
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3