GBPC108-E4/51 Vishay, GBPC108-E4/51 Datasheet - Page 3
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GBPC108-E4/51
Manufacturer Part Number
GBPC108-E4/51
Description
DIODE GPP 1PH 3A 800V GBPC1
Manufacturer
Vishay
Specifications of GBPC108-E4/51
Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
2A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBPC1
Product
Single Phase Bridge
Peak Reverse Voltage
800 V
Maximum Rms Reverse Voltage
560 V
Max Surge Current
60 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
16 mm
Width
16 mm
Height
5.08 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
800V
Rms Voltage (max)
560V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
2A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBPC1
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Screw
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88611
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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For technical questions within your region, please contact one of the following:
1.0
60
1.2
T
T
J
J
Polarity shown on side of case: Positive lead by beveled corner
80
= 125 °C
= 25 °C
Hole For #6 Screw
1.4
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
0.032 (0.81)
0.028 (0.71)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.6
DIA.
DIA.
Case Style GBPC1
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
100
100
0.1
0.445 (11.30)
0.405 (10.29)
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.750 (19.05)
GBPC1005 thru GBPC110
Vishay General Semiconductor
MIN.
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3