3KBP08M-E4/51 Vishay, 3KBP08M-E4/51 Datasheet - Page 3

• Manufacturer Part Number: 3KBP08M-E4/51
• Description: DIODE BRIDGE 3A 800V KBPM
• Manufacturer: Vishay

Specifications of 3KBP08M-E4/51

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBPM)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Max Surge Current: 80 A
• Forward Voltage Drop: 1.05 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 15.24 mm
• Width: 5.08 mm
• Height: 11.68 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 800V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 1.05V
• Diode Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88888
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
10
0.1
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
10
T
Percent of Rated Peak Reverse Voltage (%)
J
0.5
20
= 125 °C
Instantaneous Forward Voltage (V)
T
30
J
0.6
= 150 °C
40
0.7
T
J
50
T
= 150 °C
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J
0.8
For technical questions within your region, please contact one of the following:
= 25 °C
T
T
J
J
60
= 125 °C
= 25 °C
0.9
70
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.1
90
(15.2)
0.60
MIN.
1.2
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
3KBP005M thru 3KBP08M
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3