RMB4S-E3/80 Vishay, RMB4S-E3/80 Datasheet - Page 3

• Manufacturer Part Number: RMB4S-E3/80
• Description: DIODE 0.5A 400V 150NS MBS
• Manufacturer: Vishay

Specifications of RMB4S-E3/80

• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 400 V
• Maximum Rms Reverse Voltage: 280 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.95 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1.25V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88705
Revision: 01-Feb-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
0.161 (4.10)
40
= 125 °C
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0.9
T
0.029 (0.74)
0.017 (0.43)
J
60
= 25 °C
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
RMB2S & RMB4S
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3