RMB2S-E3/80 Vishay, RMB2S-E3/80 Datasheet - Page 3

• Manufacturer Part Number: RMB2S-E3/80
• Description: DIODE 0.5A 200V 150NS MBS
• Manufacturer: Vishay

Specifications of RMB2S-E3/80

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.95 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1.25V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 30A
• Avg. Forward Curr (max): 0.8@Ta=30CA
• Rev Curr: 5uA
• Forward Voltage: 1.25V
• Package Type: TO-269AA
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88661
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
J
0.161 (4.10)
40
= 125 °C
= 25 °C
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0.9
0.029 (0.74)
0.017 (0.43)
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
MB2S, MB4S & MB6S
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3