B80C1500G-E4/51 Vishay, B80C1500G-E4/51 Datasheet - Page 3

• Manufacturer Part Number: B80C1500G-E4/51
• Description: DIODE BRIDGE 1.5A 125V WOG
• Manufacturer: Vishay

Specifications of B80C1500G-E4/51

• Voltage - Peak Reverse (max): 125V
• Current - Dc Forward (if): 1.5A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: WOG
• Product: Single Phase Bridge
• Peak Reverse Voltage: 125 V
• Maximum Rms Reverse Voltage: 80 V
• Max Surge Current: 50 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 125 C
• Length: 9.86 mm
• Width: 8.84 mm
• Height: 5.6 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 125V
• Rms Voltage (max): 80V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1.6@Ta=45CA
• Rev Curr: 10uA
• Forward Voltage: 1V
• Package Type: Case WOG
• Operating Temp Range: -40C to 125C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88501
Revision: 15-Apr-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge
0.01
100
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.4
1
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
Current Per Diode
0.8
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10
1.0
T
Single Sine-Wave
A
= 25 °C
1.2
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
100
1.4
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
B40C1500G thru B380C1500G
1.0 (25.4) MIN.
0.01
100
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
10
0.220 (5.6)
0.180 (4.6)
1
Figure 6. Typical Junction Capacitance Per Diode
1
0.060 (1.52)
0.020 (0.51)
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
J
= 100 °C
Reverse Voltage (V)
1
40
60
T
10
J
T
f = 1.0 MHz
V
= 25 °C
J
sig
= 25 °C
= 50 mVp-p
80
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100
100
3