KBP005M-E4/45 Vishay, KBP005M-E4/45 Datasheet - Page 3

• Manufacturer Part Number: KBP005M-E4/45
• Description: DIODE 1.5A 50V KBPM
• Manufacturer: Vishay

Specifications of KBP005M-E4/45

• Voltage - Peak Reverse (max): 50V
• Current - Dc Forward (if): 1.5A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBPM)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 50 V
• Maximum Rms Reverse Voltage: 35 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 50 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 15.24 mm
• Width: 5.08 mm
• Height: 11.68 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88531
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
T
0.8
J
= 25 °C
40
[e-mail], [e-mail], [e-mail]
T
1.0
J
For technical questions within your region, please contact one of the following:
= 100 °C
T
J
= 125 °C
60
1.2
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.4
(15.2)
KBP005M thru KBP10M, 3N246 thru 3N252
0.60
MIN.
1.6
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3