DF08M/45 Vishay, DF08M/45 Datasheet - Page 3

• Manufacturer Part Number: DF08M/45
• Description: RECTIFIER BRIDGE 1A 800V 6-DIP
• Manufacturer: Vishay

Specifications of DF08M/45

• Diode Type: Single Phase
• Package / Case: 4-EDIP (0.300", 7.62mm)
• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• Forward Voltage: 1.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: DF08M/45GI; DF08MGI; DF08MGI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88571
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
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0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3