MB6M-E3/45 Vishay, MB6M-E3/45 Datasheet

MB6M-E3/45

Manufacturer Part Number

MB6M-E3/45

Description

DIODE GPP 0.5A 600V MBM 4DIP

Manufacturer

Vishay

Datasheets

1.MB2M-E345.pdf (4 pages)

2.MB6M-E345.pdf (4 pages)

Specifications of MB6M-E3/45

Voltage - Peak Reverse (max)

600V

Current - Dc Forward (if)

500mA

Diode Type

Single Phase

Speed

Standard Recovery >500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

4-DIP (0.500", 12.70mm)

Product

Single Phase Bridge

Peak Reverse Voltage

600 V

Maximum Rms Reverse Voltage

420 V

Max Surge Current

35 A

Forward Voltage Drop

1 V

Maximum Reverse Leakage Current

5 uA

Maximum Operating Temperature

+ 150 C

Length

4.83 mm

Width

4.1 mm

Height

2.7 mm

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Phase Type

Single Phase

Number Of Elements

Peak Rep Rev Volt

600V

Rms Voltage (max)

420V

Peak Non-repetitive Surge Current (max)

35A

Avg. Forward Curr (max)

800mA

Rev Curr

5uA

Forward Voltage

Package Type

Case MBM

Operating Temp Range

-55C to 150C

Pin Count

Mounting

Through Hole

Operating Temperature Classification

Military

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MB6M-E3/45

Manufacturer:

Vishay Semiconductors

Quantity:

135

Current page: 1 of 4
Download datasheet (78Kb)

Notes:

(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads

(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad

Document Number: 88660

Revision: 01-Feb-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward output

rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

Miniature Glass Passivated Single-Phase Bridge Rectifiers

F(AV)

FSM

RRM

max.

Case Style MBM

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

on glass-epoxy P.C.B.

on aluminum substrate

200 V, 400 V, 600 V

150 °C

0.5 A

1.0 V

35 A

5 µA

SYMBOL

F(AV)

, T

FSM

RRM

RMS

STG

FEATURES

TYPICAL APPLICATIONS

General purpose use in ac-to-dc bridge full wave

rectification for power supply, lighting ballaster, battery

charger, home appliances, office equipment, and

telecommunication applications.

MECHANICAL DATA

Case: MBM

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked on body

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• High surge current capability

• Recommended for non-automotive applications

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MB2M

200

140

200

Vishay General Semiconductor

MB2M, MB4M & MB6M

- 55 to + 150

MB4M

0.5

0.8

400

280

400

5.0

(1)

(2)

MB6M

600

420

600

www.vishay.com

UNIT

°C

Related parts for MB6M-E3/45

MB6M-E3/45 Summary of contents

Page 1

... E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body SYMBOL MB2M V 200 RRM V 140 RMS V 200 DC I F(AV) I FSM STG MB2M, MB4M & MB6M Vishay General Semiconductor MB4M MB6M 400 600 280 420 400 600 (1) 0.5 (2) 0 150 UNIT ...

Page 2

... MB2M, MB4M & MB6M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode (1) Typical junction capacitance per diode Note: (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V THERMAL CHARACTERISTICS (T ...

Page 3

... MB2M, MB4M & MB6M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 100 1000 Reverse Voltage (V) 0 ...

Page 4

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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