DF06M-E3/45 Vishay, DF06M-E3/45 Datasheet - Page 3

DIODE GPP 1A 600V 6DIP

DF06M-E3/45

Manufacturer Part Number
DF06M-E3/45
Description
DIODE GPP 1A 600V 6DIP
Manufacturer
Vishay
Datasheet

Specifications of DF06M-E3/45

Diode Type
Single Phase
Package / Case
4-EDIP (0.300", 7.62mm)
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Single Phase Bridge
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
420 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current Rating
1A
Leaded Process Compatible
Yes
Forward Voltage
1.1V
Forward Current If
1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF06M-E3/45
Manufacturer:
ST
0
Company:
Part Number:
DF06M-E3/45
Quantity:
55 800
Company:
Part Number:
DF06M-E3/45
Quantity:
250
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88571
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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