DF10SA-E3/77 Vishay, DF10SA-E3/77 Datasheet - Page 3
![DIODE GPP 1A 1000V 4SMD](/photos/16/3/160391/dfs_sml.jpg)
DF10SA-E3/77
Manufacturer Part Number
DF10SA-E3/77
Description
DIODE GPP 1A 1000V 4SMD
Manufacturer
Vishay
Datasheet
1.DF005SA-E345.pdf
(4 pages)
Specifications of DF10SA-E3/77
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
4-SMD (DFS)
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Max Surge Current
30 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1A
Forward Voltage Vf Max
1.1V
Diode Mounting Type
SMD
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DF10SA-E3/45
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF10SA-E3/77
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88574
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
= 125 °C
0.320 (8.13)
0.335 (8.51)
T
0.205 (5.2)
0.195 (5.0)
J
0.8
40
= 50 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Case Style DFS
1.0
60
45°
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
DF005SA thru DF10SA
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3