MB2S-E3/80 Vishay, MB2S-E3/80 Datasheet - Page 2

• Manufacturer Part Number: MB2S-E3/80
• Description: DIODE BRIDGE 0.5A TO-269AA
• Manufacturer: Vishay

Specifications of MB2S-E3/80

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 35 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.95 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Bridge: RoHS Compliant
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 35A
• Avg. Forward Curr (max): 800mA
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: TO-269AA
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

MB2S, MB4S & MB6S
Vishay General Semiconductor
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current at rated
DC blocking voltage per diode
Typical junction capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
MB2S-E3/45
MB2S-E3/80
A
= 25 °C unless otherwise noted)
0.7
0.4
0.8
0.6
0.5
0.3
0.2
Figure 1. Derating Curve for Output Rectified Current
0.1
0
0
Resistive or Inductive Load
Glass
Epoxy
P.C.B.
20
40
Ambient Temperature (°C)
UNIT WEIGHT (g)
60
Aluminum Substrate
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
80
0.22
0.22
100
TEST CONDITIONS
0.4 A
T
T
4.0 V, 1 MHz
120
A
A
= 25 °C
= 125 °C
PREFERRED PACKAGE CODE
140
A
= 25 °C unless otherwise noted)
160
A
= 25 °C unless otherwise noted)
45
80
SYMBOL
SYMBOL
R
R
R
V
C
I
θJA
θJA
θJL
R
F
J
Figure 2. Maximum Non-Repetitive Peak Forward Surge
MB2S
MB2S
35
30
25
20
15
10
5
0
BASE QUANTITY
1
f = 50 Hz
3000
100
Current Per Diode
MB4S
MB4S
1.0 Cycle
Number of Cycles
70
20
85
100
1.0
5.0
13
(1)
(2)
(1)
10
13" diameter paper tape and reel
T
Single Half Sine-Wave
A
= 40 °C
f = 60 Hz
DELIVERY MODE
Document Number: 88661
MB6S
MB6S
Tube
Revision: 01-Feb-08
100
UNIT
UNIT
°C/W
µA
pF
V