2KBP10M-E4/51 Vishay, 2KBP10M-E4/51 Datasheet - Page 3
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2KBP10M-E4/51
Manufacturer Part Number
2KBP10M-E4/51
Description
RECTIFIER BRIDGE 2A 1000V KBPM
Manufacturer
Vishay
Datasheet
1.3N253-E445.pdf
(4 pages)
Specifications of 2KBP10M-E4/51
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
2A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (KBPM)
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Max Surge Current
60 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 165 C
Length
15.24 mm
Width
5.08 mm
Height
11.68 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
2A
Forward Voltage Vf Max
1.1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +165°C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
2@Ta=55CA
Rev Curr
5uA
Forward Voltage
1.1V
Package Type
Case KBPM
Operating Temp Range
-55C to 165C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
2KBP10M-E4/1
2KBP10M-E4/1
2KBP10M-E4/1GI
2KBP10M-E4/1GI
2KBP10M-E4/1TR
2KBP10M-E4/1TR
2KBP10M-E4/51GI
2KBP10M-E4/1
2KBP10M-E4/1GI
2KBP10M-E4/1GI
2KBP10M-E4/1TR
2KBP10M-E4/1TR
2KBP10M-E4/51GI
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3