CDBHD1100L-G Comchip Technology, CDBHD1100L-G Datasheet
CDBHD1100L-G
Manufacturer Part Number
CDBHD1100L-G
Description
DIODE SCHOTTKY 1A 100V TO-269AA
Manufacturer
Comchip Technology
Datasheet
1.CDBHD1100L-G.pdf
(2 pages)
Specifications of CDBHD1100L-G
Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
1A
Diode Type
Single Phase, Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-269AA
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Forward Voltage Drop
0.75 V
Maximum Reverse Leakage Current
5 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
641-1209-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CDBHD1100L-G
Manufacturer:
COMCHIP/典琦科技
Quantity:
20 000
Note
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area,
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
Low V
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
MDS0702004A
• Low Vf Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• High surge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
• Lead-free part, meet RoHS requirements
CDBHD120L-G Thru 1100L-G
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
Features
Mechanical Data
wheeling, and polarity protection applications
F
Schottky Bridge Rectifiers
T
see Figure 1
T
A
CDBHD - Symbols
A
= 100 °C
=
25°C
:
V
T
V
I
R
V
R
FSM
C
RRM
V
I
T
STG
I
RMS
AV
DC
R
θJA
θJL
F
J
J
120L
14
20
20
0.44
~
+
.193(4.90)
.177(4.50)
140L
40
.031(0.8)
.019(0.5)
28
250
40
–
-55 ~ +125
-55 ~ +150
~
–
+
0.625
.106(2.7)
.090(2.3)
30.0
160L
20.0
20.0
85.0
1.0
0.5
42
COMCHIP
60
SMD DIODE SPECIALIST
60
.067(1.7)
.057(1.3)
.008(0.2)
Mini-DIP
.106(2.7)
.090(2.3)
Max.
180L
80
56
80
125
0.75
~
C .02(0.5)
1100L
100
.114(2.90)
.094(2.40)
100
~
70
Page 1
Unit :inch(mm)
.051(1.3)
.035(0.9)
Amps
Amps
Units
°C/W
Volts
Volts
Volts
Volts
pF
°C
°C
mA
.016(0.41)
.006(0.15)
.043(1.1)
.027(0.7)
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CDBHD1100L-G Summary of contents
Page 1
... Low V Schottky Bridge Rectifiers F CDBHD120L-G Thru 1100L-G Reverse Voltage 100 Volts Forward Current: 1.0 Amp Features • Low Vf Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • High surge current capability • Silicon epitaxial planar chips • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • ...
Page 2
... Low V Schottky Bridge Rectifiers F Fig.1 - Forward Current Derating Curve 1.2 1.0 0.8 CDBHD120L-G - 160L-G 0.6 CDBHD180L-G - 1100L-G 0.4 single phase half wave 60Hz 0.2 resistive or inductive load 3.75”(9.5mm) lead length 100 125 Lead Temperature ( °C) Fig Typical Instantaneour Forward ...