GBPC3508-E4/51 Vishay, GBPC3508-E4/51 Datasheet - Page 4

• Manufacturer Part Number: GBPC3508-E4/51
• Description: RECTIFIER BRIDGE 35A 800V GBPC
• Manufacturer: Vishay

Specifications of GBPC3508-E4/51

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 35A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: QC Terminal
• Package / Case: GBPC
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Forward Continuous Current: 35 A
• Max Surge Current: 400 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 28.8 mm
• Width: 28.8 mm
• Height: 7.62 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: GBPC3508-E4/1; GBPC3508-E4/1; GBPC3508-E4/1GI; GBPC3508-E4/1GI; GBPC3508-E4/51GI

GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
Fig. 7 - Typical Junction Capacitance Per Diode
1
0.220 (5.59)
0.200 (5.08)
#10 Screw
Hole for
0.310 (7.87)
0.290 (7.36)
1.115 (28.3)
1.135 (28.8)
0.042 (1.07)
0.038 (0.97)
0.24 (6.0)
0.18 (4.6)
DIA.
Reverse Voltage (V)
DIA.
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
10
GBPC-W
0.430 (10.9)
0.470 (11.9)
1.135 (28.8)
0.732 (18.6)
0.692 (17.6)
1.115 (28.3)
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
This document is subject to change without notice.
0.44 (11.7)
0.50 (12.7)
0.18 (4.6)
0.24 (6.0)
0.732 (18.6)
0.692 (17.6)
(31.8)
100
MIN.
1.25
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.200 (5.08)
0.220 (5.59)
#10 Screw
Hole for
0.034 (0.86)
0.030 (0.76)
0.094 (2.4)
1000
0.632 (16.1)
Fig. 8 - Typical Transient Thermal Impedance Per Diode
0.672 (17.1)
0.034 (0.86)
0.030 (0.76)
100
DIA.
10
1
0.01
[e-mail]
DIA.
GBPC
0.1
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
t - Heating Time (s)
(6.35)
0.25
1
AC
www.vishay.com/doc?91000
0.582 (14.8)
0.542 (13.8)
Document Number: 88612
T
f = 1.0 MHz
V
0.840 (21.3)
0.740 (18.8)
J
sig
10
= 25 °C
= 50 mVp-p
Revision: 28-Mar-11
100