W10G-E4/51 Vishay, W10G-E4/51 Datasheet - Page 3
![RECTIFIER BRIDGE 1.5A 1000V WOG](/photos/5/21/52183/w005g_sml.jpg)
W10G-E4/51
Manufacturer Part Number
W10G-E4/51
Description
RECTIFIER BRIDGE 1.5A 1000V WOG
Manufacturer
Vishay
Datasheet
1.W005G1.pdf
(4 pages)
Specifications of W10G-E4/51
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
1.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
WOG
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Forward Continuous Current
1.5 A
Max Surge Current
50 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
9.86 mm
Width
8.84 mm
Height
5.6 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1.5A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case WOG
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
W10G-E4/1
W10G-E4/1
W10G-E4/1GI
W10G-E4/1GI
W10G-E4/1TR
W10G-E4/1TR
W10G-E4/51GI
W10G-E4/1
W10G-E4/1GI
W10G-E4/1GI
W10G-E4/1TR
W10G-E4/1TR
W10G-E4/51GI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88769
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
1.0
For technical questions within your region, please contact one of the following:
T
T
Pulse Width = 300 µs
1 % Duty Cycle
J
60
J
= 100 °C
= 25 °C
1.2
T
J
80
= 25 °C
1.4
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
1.6
100
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
1.0 (25.4) MIN.
100
100
0.1
10
10
0.220 (5.6)
0.180 (4.6)
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.060 (1.52)
0.01
0.020 (0.51)
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
W005G thru W10G
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3