W10G-E4/51 Vishay, W10G-E4/51 Datasheet - Page 3

• Manufacturer Part Number: W10G-E4/51
• Description: RECTIFIER BRIDGE 1.5A 1000V WOG
• Manufacturer: Vishay

Specifications of W10G-E4/51

• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 1.5A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: WOG
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 50 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 9.86 mm
• Width: 8.84 mm
• Height: 5.6 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1kV
• Rms Voltage (max): 700V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1.5A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case WOG
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: W10G-E4/1; W10G-E4/1; W10G-E4/1GI; W10G-E4/1GI; W10G-E4/1TR; W10G-E4/1TR; W10G-E4/51GI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88769
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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1.0
For technical questions within your region, please contact one of the following:
T
T
Pulse Width = 300 µs
1 % Duty Cycle
J
60
J
= 100 °C
= 25 °C
1.2
T
J
80
= 25 °C
1.4
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
1.6
100
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
1.0 (25.4) MIN.
100
100
0.1
10
10
0.220 (5.6)
0.180 (4.6)
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.060 (1.52)
0.01
0.020 (0.51)
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
W005G thru W10G
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3