TLP741G(N,F) Toshiba, TLP741G(N,F) Datasheet - Page 2

• Manufacturer Part Number: TLP741G(N,F)
• Description: Triac & SCR Output Optocouplers 400Vdrm 4000Vrms
• Manufacturer: Toshiba

Specifications of TLP741G(N,F)

• Configuration: 1 Channel
• Maximum Continuous Output Current: 150 mA
• Maximum Input Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Maximum Power Dissipation: 250 mW
• Maximum Reverse Diode Voltage: 5 V
• Maximum Turn-on Time: 10 us
• Minimum Operating Temperature: - 25 C
• Mounting Style: Through Hole
• Package / Case: PDIP-6
• Zero-crossing Circuit: No
• Isolation Voltage: 4000 V
• Peak Output Voltage (vdrm): 400 V
• Maximum Input Voltage: 120 VAC
• Maximum Output Voltage: 400 V
• Minimum Trigger Current: 4 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Supply voltage
Forward current
Operating temperature
Gate to cathode resistance
Gate to cathode capacity
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating (Ta ≥ 39°C)
Peak forward current (100μs pulse, 100pps)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Reverse voltage
Junction temperature
Peak forward voltage(R
Peak reverse voltage(R
On−state current
On−state current derating (Ta ≥ 25°C)
Peak on−state current (100μs pulse, 120pps)
Peak one cycle surge current
Peak reverse gate voltage
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
GK
GK
= 27kΩ)
= 27kΩ)
Symbol
R
C
(Ta = 25°C)
V
T
I
opr
AC
GK
GK
F
Min.
−25
15
―
―
―
ΔP
ΔP
ΔP
ΔI
I
ΔI
Symbol
T(RMS)
V
V
I
V
T
BV
T
T
Typ.
0.01
F
T
TSM
I
I
P
V
DRM
RRM
P
D
D
P
T
I
FP
T
TP
T
―
20
―
27
GM
stg
opr
sol
F
D
R
D
2
/ °C
/ °C
T
j
j
/ °C
/ °C
/ °C
S
Max.
120
0.1
25
85
33
−55~125
−55~100
Rating
4000
−0.7
−1.0
−2.0
−2.0
−3.3
100
125
400
400
150
150
100
260
250
Unit
V
mA
60
kΩ
°C
μF
1
5
3
2
5
ac
mW / °C
mW / °C
mW / °C
mA / °C
mA / °C
V rms
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
V
A
A
V
2007-10-01
TLP741G