SFH6286-3 Vishay, SFH6286-3 Datasheet - Page 2

• Manufacturer Part Number: SFH6286-3
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 100-320%
• Manufacturer: Vishay

Specifications of SFH6286-3

• Isolation Voltage: 5300 Vrms
• Maximum Fall Time: 5 us
• Maximum Input Diode Current: 50 mA
• Maximum Rise Time: 3.5 us
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: AC
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4 Gull Wing
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 5mA
• Output Voltage: 55V
• Opto Case Style: SMD
• No. Of Pins: 4
• Mounting Type: Through Hole
• Number Of Elements: 1
• Forward Voltage: 1.5V
• Forward Current: 50mA
• Collector-emitter Voltage: 55V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.4V
• Fall Time: 5000ns
• Rise Time: 3500ns
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SFH628A, SFH6286
Vishay Semiconductors
Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
674
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between
emitter and detector
Comparative tracking index per DIN IEC112/
VDE 0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Capacitance
Thermal resistance
OUTPUT
Collector emitter leakage current
Collector emitter capacitance
Thermal resistance
COUPLER
Collector emitter saturation
voltage
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
I
I
I
F
F
F
= ± 1 mA, I
V
V
= ± 1 mA, I
= ± 1 mA, I
TEST CONDITION
CE
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
Optocoupler, Phototransistor Output,
F
CE
= 5 mA
= 10 V
(1)
C
C
C
AC Input, Low Input Current
= 1.25 mA
= 0.5 mA
= 0.8 mA
max. 10 s, dip soldering distance
V
V
to seating plane ≥ 1.5 mm
IO
IO
= 500 V, T
TEST CONDITION
= 500 V, T
SFH628A-2
SFH628A-3
SFH628A-4
SFH6286-2
SFH6286-3
SFH6286-4
t
p
≤ 1.0 ms
PART
amb
amb
= 100 °C
= 25 °C
SYMBOL
V
V
V
V
V
V
R
I
R
C
C
CEO
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
V
thja
thja
CE
O
F
SYMBOL
MIN.
P
T
V
V
V
R
R
T
T
I
I
amb
diss
ISO
CE
EC
stg
sld
C
C
IO
IO
TYP.
1070
0.25
0.25
0.25
0.25
0.25
0.25
500
1.1
45
10
- 55 to + 150
- 55 to +100
7
VALUE
≥ 10
≥ 10
5300
≥ 0.4
100
150
175
260
≥ 7
≥ 7
55
50
Document Number: 83722
7
12
11
MAX.
200
1.5
0.4
0.4
0.4
0.4
0.4
0.4
Rev. 1.7, 10-Dec-08
UNIT
V
mW
mm
mm
mm
mA
mA
°C
°C
°C
RMS
Ω
Ω
V
V
UNIT
K/W
K/W
pF
nA
pF
V
V
V
V
V
V
V