SFH615AGB-X009 Vishay, SFH615AGB-X009 Datasheet - Page 4
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SFH615AGB-X009
Manufacturer Part Number
SFH615AGB-X009
Description
Transistor Output Optocouplers Phototransistor Out Single CTR>100-600%
Manufacturer
Vishay
Datasheet
1.SFH615A-3X006.pdf
(7 pages)
Specifications of SFH615AGB-X009
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5300 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-4 Gull Wing
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFH615AGB-X009
Manufacturer:
VISHAY/威世
Quantity:
20 000
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors
www.vishay.com
642
Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
isfh615aa_05
isfh615aa_04
Fig. 4 - Permissible Diode Forward Current vs.
isfh615aa_03
I
I
F
c
C
120
mA
mA
30
20
10
pF
90
60
30
20
15
10
0
0
5
0
10
0
0
-2
Collector Emitter Voltage
Ambient Temperature
10
25
-1
5
I
f = 1.0 MHz
F
= 1 mA
50
10
For technical questions, contact: optocoupler.answers@vishay.com
0
C
CE
10
V
e
I
I
I
I
I
I
I
F
F
F
F
F
F
F
10
75
= 14 mA
= 12 mA
= 10 mA
= 8 mA
= 6 mA
= 4 mA
= 2 mA
Optocoupler, Phototransistor Output,
1
T
V
A
CE
V
°C
V
High Reliability, 5300 V
100
15
10
2
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs.
Fig. 7 - Diode Forward Voltage (Typ.) vs. Forward Current
Fig. 8 - Permissible Power Dissipation vs. Temperature
isfh615aa_07
P
isfh615aa_06
V
isfh615aa_08
tot
I
F
F
200
mW
150
100
RMS
10
10
10
10
1.2
1.1
1.0
0.9
mA
50
V
5
0
4
3
2
1
5
5
10
10
0
0.05
0.1
0.2
0.5
DC
-1
-5
D = 0
10
0.005
0.01
0.02
-4
5
25
Pulse Width
D =
10
10
Diode
Transistor
0
-3
t p
T
50
10
D = parameter
Pulse cycle
-2
5
t p
t p
Document Number: 83672
10
10
T
1
-1
75
I
25 °C
50 °C
75 °C
Rev. 1.7, 10-Dec-08
t
5 mA
F
T
p
10
A
°C
0
s
I F
I F
100
10
10
1
2