CNY17F-4X006 Vishay, CNY17F-4X006 Datasheet - Page 2

• Manufacturer Part Number: CNY17F-4X006
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 160-320%
• Manufacturer: Vishay

Specifications of CNY17F-4X006

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CNY17F
Vishay Semiconductors
Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
www.vishay.com
2
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector referred to
standard climate 23/50 DIN 50014
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
Thermal resistance
= 25 °C, unless otherwise specified.
For technical questions, contact: [e-mail]
V
V
V
V
CE
CE
CE
TEST CONDITION
R
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
Optocoupler, Phototransistor Output,
= 0 V, f = 1.0 MHz
I
I
V
F
R
R
= 60 mA
= 10 µA
max. 10 s, dip soldering: distance to
= 6.0 V
seating plane ≥ 1.5 mm
no Base Connection
TEST CONDITION
V
t ≤ 1.0 ms
IO
t ≤ 10 µs
= 500 V
PART
SYMBOL
V
C
C
C
R
R
C
V
I
BR
CE
BC
R
EB
th
th
F
O
SYMBOL
BV
P
P
V
T
I
R
T
T
V
FSM
I
I
amb
T
I
diss
diss
ISO
stg
sld
F
CEO
C
C
IO
R
j
MIN.
6.0
- 55 to + 150
- 55 to + 100
TYP.
1.25
0.01
750
500
5.2
6.5
7.5
25
VALUE
≥ 10
5300
≥ 7.0
≥ 7.0
≥ 0.4
100
100
150
175
100
260
6.0
2.5
60
70
50
Document Number: 83607
11
MAX.
Rev. 1.5, 28-Nov-07
1.65
10
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
Ω
V
A
V
UNIT
K/W
K/W
µA
pF
pF
pF
pF
V
V