CNY172SM Fairchild Semiconductor, CNY172SM Datasheet - Page 6

• Manufacturer Part Number: CNY172SM
• Description: Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of CNY172SM

• Maximum Fall Time: 24 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 6 us
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
Typical Performance Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
10
100
0.1
10
0
1
0.1
V
T
I
F
Fig. 1 Normalized CTR vs. Forward Current
CE
A
= 20mA
I
V
T
= 25˚C
F
Fig. 5 Switching Speed vs. Load Resistor
CC
A
= 5.0V
2
= 10mA
= 25˚C
= 10V
Fig. 3 CTR vs. RBE (Unsaturated)
4
I
I
F
F
= 10mA
– FORWARD CURRENT (mA)
6
R
R – LOAD RESISTOR (k
BE
1
– BASE RESISTANCE (k
T
8
T
on
r
T
off
10
100
12
V
I
F
CE
= 5mA
10
= 5.0V
T
14
f
Normalized to
I
16
F
= 10mA
18
100
20
1000
6
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
10
-60
Fig. 2 Normalized CTR vs. Ambient Temperature
Normalized to:
I
T
F
A
= 10mA
= 25˚C
-40
R
T
Fig. 4 CTR vs. RBE (Saturated)
-20
Fig. 6 Normalized t
100
BE
A
– AMBIENT TEMPERATURE (˚C)
R
– BASE RESISTANCE (k
BE
– BASE RESISTANCE (k
0
I
I
F
F
= 10mA
= 20mA
I
F
20
= 5mA
1000
100
I
I
F
F
I
F
= 5mA
= 10mA
40
= 20mA
on
vs. R
60
10000
BE
V
V
I
R
www.fairchildsemi.com
C
CE
CC =
L
80
= 2mA
= 100
= 0.3V
10V
100
100000
1000