CNY17-1M Everlight Electronics CO., LTD, CNY17-1M Datasheet
CNY17-1M
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CNY17-1M Summary of contents
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... ANODE 2 CATHODE 3 NC CNY17F1M/2M/3M/4M MOC8106M/7M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Package Outlines 6 NC ANODE 5 COLLECTOR CATHODE 4 EMITTER ...
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... C V Collector-Emitter Voltage CEO V Emitter Collector Voltage ECO P Detector Power Dissipation @ 25°C D Derate Linearly from 25°C ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameters 2 Value Units -40 to +150 °C -40 to +100 °C -40 to +125 ºC 260 for 10 sec °C ...
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... MOC8107M CNY17F1M CNY17F2M CNY17F3M CNY17F4M CNY171M CNY172M CNY173M CNY174M V Collector-Emitter CNY17XM/FXM CE(sat) Saturation Voltage MOC8106M/7M *All typicals 25°C A ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1 25°C Unless otherwise specified.) A Test Conditions Device I = 60mA CNY17XM, F CNY17FXM I = 10mA MOC810XM 1.0MHz F V ...
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... Current Transfer Ratio (CTR For test circuit setup and waveforms, refer to Figures 10 and 11. 4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued 25°C Unless otherwise specified.) A ...
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... Max. Working Insulation Voltage Vpeak IORM V Highest Allowable Over Voltage Vpeak IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. Max. ...
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... Fig. 5 Switching Speed vs. Load Resistor 1000 I = 10mA 10V 25˚C A 100 T off 0.1 0 – LOAD RESISTOR (k ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Fig. 2 Normalized CTR vs. Ambient Temperature 1.4 Normalized 10mA F 1.2 1.0 0.8 0.6 0.4 Normalized to 0 -60 1.0 0.9 ...
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... R – BASE RESISTANCE ( INPUT Figure 10. Switching Time Test Circuit ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued) vs. R off BE V 10V 2mA 100 L 10000 100000 Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current 100 T = 25˚C ...
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... Note: All dimensions in mm. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... TV SV SR2V Marking Information Definitions ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Order Entry Identifier (Example) CNY171M Standard Through Hole Device CNY171SM Surface Mount Lead Bend CNY171SR2M Surface Mount; Tape and Reel CNY171TM 0.4" Lead Spacing CNY171VM IEC60747-5-2 CNY171TVM IEC60747-5-2, 0.4" ...
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... C 140 120 100 ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø1.5 MIN 1 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...