NTD4959NT4G ON Semiconductor, NTD4959NT4G Datasheet

MOSFET N-CH 30V 9A DPAK-4

NTD4959NT4G

Manufacturer Part Number
NTD4959NT4G
Description
MOSFET N-CH 30V 9A DPAK-4
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4959NT4G

Input Capacitance (ciss) @ Vds
1456pF @ 12V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 11.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NTD4959NH
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 0
Continuous Drain
Current (R
Power Dissipation
(R
Continuous Drain
Current (R
Power Dissipation
(R
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Pulsed Drain Current
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
L = 1.0 mH, I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Drain−to−Source Voltage
Gate−to−Source Voltage
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
CPU Power Delivery
DC−DC Converters
Low Side Switching
qJA
qJA
qJC
) (Note 1)
) (Note 2)
) (Note 1)
DS(on)
DD
qJA
qJA
qJC
L(pk)
= 24 V, V
) (Note 1)
) (Note 2)
)
to Minimize Conduction Losses
Parameter
= 15 A, R
GS
(T
t
= 10 V,
J
Steady
p
State
G
=10ms
= 25°C unless otherwise noted)
= 25 W)
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
T
V
dV/dt
J
V
E
I
P
P
P
, T
T
DSS
DM
I
I
I
I
GS
D
D
D
AS
S
D
D
D
L
stg
−55 to
Value
112.5
"20
11.5
130
175
260
9.0
2.0
9.0
7.0
1.3
6.0
30
58
45
52
45
43
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
CASE 369AA
(Bent Lead)
V
1 2
Drain
Drain 3
(BR)DSS
STYLE 2
30 V
DPAK
4
2
Source
3
ORDERING INFORMATION
G
Y
WW
4959NH= Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
http://onsemi.com
Gate
12.5 mW @ 4.5 V
9.0 mW @ 10 V
(Straight Lead)
CASE 369AD
R
1
= Year
= Work Week
= Pb−Free Package
Drain
DS(on)
Drain
3 IPAK
D
4
2
Publication Order Number:
3
S
MAX
Source
Gate
N−Channel
(Straight Lead
NTD4959NH/D
CASE 369D
1
1
Drain
Drain
DPAK)
2
IPAK
I
D
4
2
3
58 A
MAX
3
Source
4

Related parts for NTD4959NT4G

NTD4959NT4G Summary of contents

Page 1

NTD4959NH Power MOSFET Single N−Channel, DPAK/IPAK Features • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) 1. Surface−mounted on FR4 board using pad size Cu. 2. Surface−mounted on FR4 board using ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance (T = 25°C unless otherwise noted) ...

Page 4

4 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 ...

Page 5

C iss 1500 1000 500 C oss C rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 d(off d(on GATE RESISTANCE (OHMS) ...

Page 6

D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 ORDERING INFORMATION Device NTD4959NHT4G NTD4959NH−1G NTD4959NH−35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape ...

Page 7

... 0.13 (0.005) M 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA−01 ISSUE A SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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