SI4406DY-T1-E3 Vishay, SI4406DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4406DY-T1-E3
• Description: MOSFET N-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4406DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4406DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71824.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.6
0.4
0.2
0.0
0.01
- 5 0
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 25
- 4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.1
I
D
0
= 250 µA
Single Pulse
Threshold Voltage
T
J
2 5
- Temperature (°C)
10
- 3
5 0
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
7 5
Normalized Thermal Transient Impedance, Junction-to-Foot
Single Pulse
100
10
- 2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
- 2
10
- 1
60
50
40
30
20
10
10
0
10
1
- 1
- 2
10
- 1
Single Pulse Power
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
1
t
S09-0221-Rev. E, 09-Feb-09
1
A
= P
t
Document Number: 71824
2
DM
10
Z
th J A
th J A
100
t
t
1
2
(t )
= 67 °C/W
100
600
10
600